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| CHA2095A 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095A is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. In Vd Vd Out Vg 1,2 Vg 3,4 Typical on wafer measurements : | Broadband performances | 3.5dB Noise Figure | 26dB gain | 1.0dB gain flatness | Low DC power consumption, 90mA @ 3.5V | Chip size : 2.07 X 1.11 X 0.10 mm Gain & NF ( dB ) Main Features 30 25 20 15 10 5 0 30 35 40 Frequency (GHz) 45 50 Main Characteristics Tamb. = 25C Symbol Fop G P1dB NF Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Noise figure Min 36 22 8 Typ Max 40 Unit GHz dB dBm 26 10 3.5 4.0 dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA20958147 1/7 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2095A Electrical Characteristics Tamb = +25C, Vd= 3.5V Symbol Fop G G Gsb Is P1dB VSWRin 36-40GHz Low Noise Amplifier Parameter Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Gain ripple over 40MHz ( within -30 ; +75C ) Reverse isolation (1) Output power at 1dB gain compression Input VSWR (1) Min 36 22 Typ Max 40 Unit GHz dB dB 26 1.0 0.5 dBpp dB dBm 35 8 40 10 2.5:1 2.5:1 3.5 3.0:1 3.0:1 4.0 4 +0.4 140 VSWRout Output VSWR (1) NF Vdc Noise figure (2) DC Voltage Vd Vg dB V V mA 3.5 -2 90 Id Bias current (2) (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. (2) 90 mA is the typical bias current used for on wafer measurements, with adjusting Vg1,2 voltage for optimum noise figure and Vg3,4 adjusting for maximum gain. Absolute Maximum Ratings Tamb. = 25C (1) Symbol Vd Vg Id Pin Ta Tstg (1) (2) Parameter Drain bias voltage Gate bias voltage Drain bias current Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Values 4.0 -2.0 to +0.4 200 +15 -40 to +85 -55 to +155 Unit V V mA dBm C C Operation of this device above anyone of these parameters may cause permanent damage. Duration < 1s. Ref. : DSCHA20958147 2/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 36-40GHz Low Noise Amplifier Bias Conditions : Freq. GHz 2 4 6 8 10 12 14 16 18 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 S11 dB -4.08 -5.88 -5.85 -5.39 -4.86 -4.42 -4.08 -3.86 -3.75 -3.74 -3.79 -3.86 -4.07 -4.25 -4.62 -5.10 -5.86 -6.96 -8.56 -10.85 -13.21 -12.39 -11.54 -17.21 -20.36 -13.92 -10.14 -8.35 -8.59 -10.56 -16.13 -22.46 -15.92 -12.13 -9.91 -8.25 -6.10 -3.79 -1.93 -1.26 -0.92 -0.73 -0.64 -0.66 -0.63 CHA2095A Typical Scattering Parameters ( On wafer Sij measurements ) Vd= 3.5 Volt, Vg1,2 = -0.5V, Vg3,4 = -0.3V, Id = 90 mA. S11 / -69.3 -96.9 -115.9 -131.8 -145.7 -158.3 -170.2 177.7 165.3 152.0 145.3 137.4 129.4 120.4 110.0 98.1 83.9 66.3 43.0 9.2 -44.9 -121.0 161.0 82.0 -35.5 -105.9 -139.8 -170.4 157.4 122.6 80.3 -18.9 -81.9 -107.0 -119.3 -123.9 -125.8 -139.9 -154.8 -167.8 179.8 170.5 162.0 154.0 147.5 S12 dB -72.96 -66.24 -64.15 -60.47 -58.55 -56.57 -54.57 -51.14 -50.79 -50.87 -50.09 -51.20 -50.03 -48.55 -48.26 -49.21 -51.02 -53.65 -55.77 -57.30 -56.20 -49.77 -49.70 -51.44 -47.38 -46.89 -47.95 -46.59 -45.05 -44.36 -42.19 -41.27 -40.37 -39.92 -40.59 -37.38 -37.23 -34.59 -44.23 -44.58 -41.46 -44.38 -65.24 -51.59 -52.88 S12 / 56.9 -10.3 -39.7 -85.0 -120.4 -140.8 -164.6 165.0 138.4 107.8 105.4 85.4 84.9 76.9 52.0 33.2 11.8 3.4 2.9 -12.5 32.7 -1.8 -31.8 -35.1 -81.5 -126.8 -139.2 164.0 177.2 142.8 111.1 88.1 70.8 43.0 19.9 -1.2 -30.8 -85.7 -109.4 -75.7 -68.6 -120.1 64.9 -46.4 -54.0 S21 dB -33.56 -27.97 -25.45 -25.28 -26.33 -28.30 -30.70 -32.77 -33.89 -36.01 -36.43 -38.94 -46.43 -51.42 -33.66 -25.59 -19.53 -13.18 -6.22 1.29 9.14 17.49 24.39 26.82 27.07 26.81 26.72 27.05 27.29 27.30 25.35 25.09 24.61 23.99 23.49 22.86 21.97 19.73 16.66 13.11 9.27 5.69 2.23 -1.42 -4.88 S21 / 147.7 81.3 18.8 -35.2 -78.4 -111.9 -135.8 -149.9 -156.4 -165.6 -171.9 -167.0 -171.8 -4.6 -13.4 -17.0 -20.6 -27.7 -37.3 -52.8 -76.6 -114.9 -175.8 115.0 61.7 17.6 -19.2 -55.3 -91.5 -129.0 -164.2 157.8 128.8 98.5 68.1 34.0 -3.5 -41.4 -76.2 -105.0 -129.2 -148.8 -166.3 176.6 162.4 S22 dB -1.13 -2.97 -4.33 -5.19 -5.62 -5.76 -5.71 -5.49 -5.28 -4.99 -4.92 -4.85 -4.85 -4.76 -4.84 -4.99 -5.14 -5.49 -5.97 -6.73 -7.93 -9.65 -11.68 -10.76 -8.74 -7.39 -7.28 -7.82 -9.01 -10.33 -11.12 -10.65 -10.47 -11.70 -13.82 -16.93 -15.21 -10.25 -7.41 -6.75 -6.70 -6.99 -7.31 -7.72 -8.06 S22 / -47.0 -80.6 -103.3 -119.2 -131.5 -141.3 -150.4 -158.9 -167.9 -177.6 177.3 171.4 166.3 159.4 152.4 144.9 136.4 126.2 114.7 99.1 78.0 41.0 -29.6 -104.3 -142.6 -171.4 167.6 151.2 141.8 136.3 138.9 139.4 130.8 122.6 118.6 129.0 174.9 172.2 152.0 136.3 123.0 112.4 103.1 95.1 87.4 Ref. : DSCHA20958147 3/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2095A Typical on Wafer Measurements Tamb = +25C 36-40GHz Low Noise Amplifier Noise figure versus drain current 60, 85, 100mA: Gain (dB) 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 34 35 36 37 frequency (Ghz) 38 39 40 Gain_60mA NF_60mA Gain_85mA NF_85mA Gain_100mA NF_100mA CHA2095 Vd=3,5v Id= 60 and 85 and 100mA NF (dB) 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Wide band on wafer Sij parameter measurements : CHA2095 Vd=3,5v Id=90mA 30 25 20 Gain & RLoss ( dB ) 15 10 5 0 -5 -10 -15 -20 -25 -30 30 35 40 45 Frequency ( GHz ) 50 55 RLoss_IN RLoss_OUT Ref. : DSCHA20958147 4/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 36-40GHz Low Noise Amplifier Chip Assembly and Mechanical Data To Vdd DC Drain supply feed 100pF CHA2095A IN OUT To Vgs1 DC Gate supply feed 100pF 100pF To Vgs2 DC Gate supply feed Note : Supply feed should be capacitively bypassed. Bonding pad positions. ( Chip thickness : 100m. All dimensions are in micrometers ) Ref. : DSCHA20958147 5/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2095A The circuit schematic is given below : 36-40GHz Low Noise Amplifier Typical Bias Tuning for Low Noise Operation Vd Vd 100 IN 100 50 50 OUT Vg 1,2 Vg 3,4 For low noise operation, a separate access to the gate voltages of the two first stages ( Vg1,2 ), and of the two last stage ( Vg3,4 ) is provided. Nominal bias is obtained for a typical current of 60 mA for the output stages and 30 mA for the two first stages ( 90 mA for the amplifier ). The first step to bias the amplifier is to tune Vg1,2 = -1V, and Vg3,4 to drive 60 mA for the full amplifier. Then Vg1,2 is increased to obtain 90 mA of current through the amplifier. A fine tuning of the noise figure may be obtained by modifying the Vg1,2 bias voltage, but keeping the previous value for Vg3,4. It is possible to reduce the total DC current by biasing Vg3,4 to a more negative value. The consequences will be a reduction of gain and of the output power capabilities of the amplifier. Vd could be adjust in such a way that the Vds ( Drain to Source voltage of the internal transistor ) is kept below 3.5V, knowing that all the transistor have the same size, and with the given resistors. Ordering Information Chip form : CHA2095A99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for Ref. : DSCHA20958147 6/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 36-40GHz Low Noise Amplifier CHA2095A use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA20958147 7/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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